H11AG1M Datasheet, PDF (2/14 Pages) Fairchild Semiconductor – Phototransistor Optocoupler

April 2015
H11AG1M
6-Pin DIP Phototransistor Optocoupler
Features
■ High-Efficiency Low-Degradation Liquid Epitaxial
IRED
■ Logic Level Compatible, Input and Output Currents,
with CMOS and LS/TTL
■ High DC Current Transfer Ratio at Low Input Currents
(as low as 200 µA)
■ Safety and Regulatory Approvals:
– UL1577, 4,170 VAC_RMS for 1 Minute
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
■ CMOS Driven Solid State Reliability
■ Telephone Ring Detector
■ Digital Logic Isolation
Description
The H11AG1M device consists of a Gallium-Aluminum-
Arsenide IRED emitting diode coupled with a silicon
phototransistor in a dual in-line package. This device
provides the unique feature of high current transfer ratio
at both low output voltage and low input current. This
makes it ideal for use in low-power logic circuits, tele-
communications equipment and portable electronics
isolation applications.
Schematic
Package Outlines
ANODE ¹
CATHODE 2
6 _BASE
5 COLLECTOR
N/C 3
4 EMITTER
Figure 1. Schematic
6
6
1
1
6
1
Figure 2. Package Outlines
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.4
www.fairchildsemi.com