ESDR7534 Datasheet, PDF (2/5 Pages) ON Semiconductor – Low Capacitance TVS for LVDS Interfaces

ESDR7534
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted)
Symbol
Parameter
I_PP
Maximum Reverse Peak Pulse Current
V_C
Clamping Voltage @ I_PP
V_RWM Working Peak Reverse Voltage
I_R
Maximum Reverse Leakage Current @ V_RWM
V_BR Breakdown Voltage @ I_T
I_T
Test Current
I_F
Forward Current
V_F
Forward Voltage @ I_F
P_pk Peak Power Dissipation
C
Capacitance @ V_R = 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
I_F
V_C V_BR V_RWM
II^{RT VF}
V
I_PP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max Unit
Reverse Working Voltage
V_RWM (Note 1)
5.0
V
Breakdown Voltage
V_BR I_T = 1 mA, (Note 2)
6.0
8.0
9.5
V
Reverse Leakage Current
I_R
V_RWM = 5 V
3.0
mA
Forward Voltage
V_F
I_F = 100 mA
1.6
V
Clamping Voltage
V_C
I_PP = 10 A (2 x 10 ms Waveform)
30
V
Maximum Peak Pulse Current
I_PP
2 x 10 ms Waveform
10
A
Junction Capacitance
C_J
V_R = 0 V, f = 1 MHz between I/O Pins and GND
1.3
2.0
pF
Junction Capacitance
C_J
V_R = 0 V, f = 1 MHz between I/O Pins, V_P floating
0.7
1.0
pF
1. TVS devices are normally selected according to the working peak reverse voltage (V_RWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
2. V_BR is measured at pulse test current I_T.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
15.0
t_r = rise time to peak value [2 ms]
Peak
t_f = decay time to half value [10 ms]
12.5
100
Value
10.0
7.5
50
Half Value
5.0
0
0 t_r
t_f
TIME (ms)
Figure 1. Exponential Decay Pulse Waveform
2.5
0
0 2 4 6 8 10 12 14 16 18 20
Ipp (A)
Figure 2. Clamping Voltage vs. Peak Pulse
Current (tp = 2 x 10 ms, R = 8 W)
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