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| ESDR0544M Datasheet, PDF (2/3 Pages) ON Semiconductor – Transient Voltage Suppressors | |||
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ESDR0544M
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max Unit
Reverse Working Voltage
VRWM (Note 1)
5.0
V
Breakdown Voltage
VBR
IT = 1 mA, (Note 2)
6.0
V
Reverse Leakage Current
IR
VRWM = 5 V
1.0
mA
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz between I/O Pins and GND
0.7
0.9
pF
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz between I/O Pins
0.3
0.7
pF
1. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
2. VBR is measured at pulse test current IT.
http://onsemi.com
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