ESDR0502N Datasheet, PDF (2/5 Pages) ON Semiconductor – Ultra Low Capacitance ESD Protection Array for High Speed Data Line Protection

ESDR0502N
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted)
Symbol
Parameter
I_PP
Maximum Reverse Peak Pulse Current
V_C
Clamping Voltage @ I_PP
V_RWM Working Peak Reverse Voltage
I_R
Maximum Reverse Leakage Current @ V_RWM
V_BR Breakdown Voltage @ I_T
I_T
Test Current
I_F
Forward Current
V_F
Forward Voltage @ I_F
P_pk
Peak Power Dissipation
C
Capacitance @ V_R = 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
I_F
V_C V_BR V_RWM
II^{RT VF}
V
I_PP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (T_J=25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max Unit
Reverse Working Voltage
V_RWM (Note 2)
5.5
V
Breakdown Voltage
V_BR
I_T = 1 mA, (Note 3)
6.0
V
Reverse Leakage Current
I_R
V_RWM = 5.5 V
1.0
mA
ESD Clamping Voltage
V_C
Per IEC61000−4−2 (Note 4)
See Figures 1 & 2
Junction Capacitance
C_J
V_R = 0 V, f = 1 MHz between I/O Pins and GND
0.3
0.6
pF
Junction Capacitance
C_J
V_R = 0 V, f = 1 MHz between I/O Pins
0.3
0.6
pF
2. TVS devices are normally selected according to the working peak reverse voltage (V_RWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V_BR is measured at pulse test current I_T.
4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
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