ESDR0502B Datasheet, PDF(2/4 Page) ON Semiconductor – Transient Voltage Suppressor ESD Protection Diodes with Ultra−Low Capacitance

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ESDR0502B Datasheet, PDF (2/4 Pages) ON Semiconductor – Transient Voltage Suppressor ESD Protection Diodes with Ultra−Low Capacitance

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ESDR0502B

ELECTRICAL CHARACTERISTICS

(TA = 25Â°C unless otherwise noted)

Symbol

Parameter

IPP

VRWM

VBR

Ppk

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

Breakdown Voltage @ IT

Test Current

Forward Current

Forward Voltage @ IF

Peak Power Dissipation

Capacitance @ VR = 0 and f = 1.0 MHz

VC VBR VRWM

IIRT VF

IPP

UniâDirectional TVS

ELECTRICAL CHARACTERISTICS (TA = 25Â°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)

VBR (V)

VRWM IR (mA)

@ IT

(V) @ VRWM (Note 2) IT

C (pF),

uniâdirectional

(Note 3)

C (pF),

biâdirectional

(Note 4)

VC (V)

@ IPP = 1 A

(Note 5)

Device

Marking Max Max

Min mA Typ

Max

Typ

Max

ESDR0502B

5.0

1.0

5.8

1.0 0.5

0.9

0.25 0.45

Per

IEC61000â

4â2

(Note 6)

Figures 1

and 2

2. VBR is measured with a pulse test current IT at an ambient temperature of 25Â°C.

3. Uniâdirectional capacitance at f = 1 MHz, VR = 0 V, TA = 25Â°C (pin1 to pin 3; pin 2 to pin 3).

4. Biâdirectional capacitance at f = 1 MHz, VR = 0 V, TA = 25Â°C (pin1 to pin 2).

5. Surge current waveform per Figure 5.

6. Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV contact per IEC 61000â4â2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV contact per IEC 61000â4â2

http://onsemi.com

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