ESD5484FCT5G_13 Datasheet, PDF (2/6 Pages) ON Semiconductor – Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection

ESD5484FCT5G
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted)
Symbol
Parameter
I_PP
Maximum Reverse Peak Pulse Current
V_C
Clamping Voltage @ I_PP
V_RWM Working Peak Reverse Voltage
I_R
Maximum Reverse Leakage Current @ V_RWM
V_BR
Breakdown Voltage @ I_T
I_T
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
I_PP
V_C V_BR V_RWM II_RT
II_RT
V_RWM V_BR V_C ^V
I_PP
Bi−Directional TVS
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
V_RWM I_R (mA)
V_BR (V) @ I_T
(V) @ V_RWM
(Note 2)
I_T
Device
Device
Marking Max
Max
Min
mA
ESD5484FCT5G
B
5.0
0.1
6.0
1.0
2. V_BR is measured with a pulse test current I_T at an ambient temperature of 25°C.
3. Surge current waveforms per Figure 5.
4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
C (pF)
Typ Max
35
45
V_C (V) @
I_PP
Max
(Note 3)
I_PP=3 A
10.3 V,
I_PP=5 A
11.3 V,
I_PP=7 A
11.5 V
V_C
Per IEC61000−4−2
(Note 4)
Figures 1 and 2
See Below
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
http://onsemi.com
2