EN2511B Datasheet, PDF (2/9 Pages) ON Semiconductor – Bipolar Transistor

2SA1593 / 2SC4135
Continued from preceding page.
Parameter
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
Unit
1
W
15
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=(--)100V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(--)100mA
VCE=(--)10V, IC=(--)100mA
VCB=(--)10V, f=1MHz
IC=(--)1A, IB=(--)100mA
IC=(--)1A, IB=(--)100mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
IE=(--)10μA, IC=0A
See specified Test Circuit.
* : The 2SA1593/2SC4135 are classified by 100mA hFE as follows :
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
min
100*
(--)120
(--)100
(--)6
Ratings
typ
120
(25)16
(--0.22)0.13
(--)0.85
(80)80
(750)1000
(40)50
max
(--)100
(--)100
400*
(--0.6)0.4
(--)1.2
Unit
nA
nA
MHz
pF
V
V
V
V
V
ns
ns
ns
Switching Time Test Circuit
IB1
IB2
INPUT
PW=20μs
DC≤1%
RB
VR
50Ω
+
+
100μF 470μF
OUTPUT
RL
--5V
50V
IC=10IB1= --10IB2=0.7A
(For PNP, the polarity is reversed)
Ordering Information
Device
2SA1593S-E
2SA1593T-E
2SC4135S-E
2SC4135T-E
2SA1593S-TL-E
2SA1593T-TL-E
2SC4135S-TL-E
2SC4135T-TL-E
Package
TP
TP
TP
TP
TP-FA
TP-FA
TP-FA
TP-FA
Shipping
500pcs./bag
500pcs./bag
500pcs./bag
500pcs./bag
700pcs./reel
700pcs./reel
700pcs./reel
700pcs./reel
memo
Pb Free
No.2511-2/9