EN2007C Datasheet, PDF (2/7 Pages) ON Semiconductor – Bipolar Transistor

2SA1419 / 2SC3649
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=(--)120V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(--)100mA
VCE=(--)5V, IC=(--)10mA
VCE=(--)10V, IC=(--)50mA
VCB=(--)10V, f=1MHz
IC=(--)500mA, IB=(--)50mA
IC=(--)500mA, IB=(--)50mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
IE=(--)10μA, IC=0A
See specified Test Circuit.
* : The 2SA1419 / 2SC3649 are classified by 100mA hFE as follows :
Rank
R
S
hFE
100 to 200
140 to 280
T
200 to 400
Switching Time Test Circuit
PW=20μs
D.C.≤1%
IB1
IB2
INPUT
VR
50Ω
RB
+
100μF
RL
+
470μF
--5V
100V
IC=10IB1=--10IB2=0.7A
(For PNP, the polarity is reversed)
min
100*
80
(--)180
(--)160
(--)6
Ratings
typ
120
(22)14
(--200)130
(--)0.85
(40)40
(0.7)1.2
(40)80
max
(--)1
(--)1
400*
(--500)450
(--)1.2
Unit
μA
μA
MHz
pF
mV
V
V
V
V
ns
μs
ns
Ordering Information
Device
2SA1419S-TD-E
2SA1419S-TD-H
2SA1419T-TD-E
2SA1419T-TD-H
2SC3649S-TD-E
2SC3649S-TD-H
2SC3649T-TD-E
2SC3649T-TD-H
Package
PCP
PCP
PCP
PCP
PCP
PCP
PCP
PCP
Shipping
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
memo
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
No.2007-2/7