EN2005C Datasheet, PDF (2/7 Pages) ON Semiconductor – Bipolar Transistor

2SA1416 / 2SC3646
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=(--)100V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(--)100mA
VCE=(--)10V, IC=(--)100mA
VCB=(--)10V, f=1MHz
IC=(--)400mA, IB=(--)40mA
IC=(--)400mA, IB=(--)40mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
IE=(--)10μA, IC=0A
See specified Test Circuit.
* : The 2SA1416 / 2SC3646 are classified by 100mA hFE as follows :
Rank
R
S
hFE
100 to 200
140 to 280
T
200 to 400
Switching Time Test Circuit
PW=20μs
D.C.≤1%
IB1
IB2
INPUT
RB
VR
50Ω
+
100μF
RL
+
470μF
--5V
50V
IC=10IB1=--10IB2=400mA
(For PNP, the polarity is reversed)
Ratings
min
typ
100*
(--)120
(--)100
(--)6
120
(13)8.5
(--0.2)0.1
(--)0.85
(80)80
(700)850
(40)50
max
(--)100
(--)100
400*
(--0.6)0.4
(--)1.2
Unit
nA
nA
MHz
pF
V
V
V
V
V
ns
ns
ns
Ordering Information
Device
2SA1416S-TD-E
2SA1416T-TD-E
2SC3646S-TD-E
2SC3646T-TD-E
Package
PCP
PCP
PCP
PCP
Shipping
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
memo
Pb Free
No.2005-2/7