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EMX1DXV6T1 Datasheet, PDF (2/4 Pages) ON Semiconductor – Dual NPN General Purpose Amplifier Transistor
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EMX1DXV6T1, EMX1DXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Voltage
(IC = 50 mAdc, IE = 0)
V(BR)CBO
60
−
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
−
Emitter-Base Breakdown Voltage
(IE = 50 mAdc, IE = 0)
V(BR)EBO
7.0
−
Collector-Base Cutoff Current
(VCB = 60 Vdc, IE = 0)
ICBO
−
−
Emitter-Base Cutoff Current
(VEB = 7.0 Vdc, IB = 0)
IEBO
−
−
Collector-Emitter Saturation Voltage (Note 2)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
−
−
DC Current Gain (Note 3)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
hFE
120
−
Transition Frequency
(VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)
fT
−
180
Output Capacitance
(VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz)
COB
−
2.0
2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
3. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
Max
−
−
−
0.5
0.5
0.4
560
−
−
Unit
Vdc
Vdc
Vdc
mA
mA
Vdc
−
MHz
pF
ORDERING INFORMATION
Device
Package
Shipping†
EMX1DXV6T1
SOT−563*
4000 Units / Tape & Reel
EMX1DXV6T1G
SOT−563*
4000 Units / Tape & Reel
EMX1DXV6T5
SOT−563*
8000 Units / Tape & Reel
EMX1DXV6T5G
SOT−563*
8000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
http://onsemi.com
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