EMD5DXV6T5G Datasheet, PDF (2/6 Pages) ON Semiconductor – Dual Bias Resistor Transistors

EMD5DXV6T5G
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted, common for Q₁ and Q₂, − minus sign for Q₁ (PNP) omitted)
Rating
Symbol Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
V_CBO
50
Vdc
V_CEO
50
Vdc
I_C
100
mAdc
Characteristic
(One Junction Heated)
Symbol Max
Unit
Total Device Dissipation
Derate above 25°C
T_A = 25°C
P_D
357
mW
(Note 1)
2.9
mW/°C
(Note 1)
Thermal Resistance
Junction-to-Ambient
R_qJA
350
(Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Symbol Max
Unit
Total Device Dissipation
Derate above 25°C
T_A = 25°C
P_D
500
mW
(Note 1)
4.0
mW/°C
(Note 1)
Thermal Resistance
Junction-to-Ambient
R_qJA
250
(Note 1)
°C/W
Junction and Storage Temperature
T_J, T_stg − 55 to
°C
+150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
http://onsemi.com
2