EMC2DXV5T1G Datasheet, PDF (2/11 Pages) ON Semiconductor – Dual Common Base-Collector Bias Resistor Transistors

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
THERMAL CHARACTERISTICS
Characteristic
ONE JUNCTION HEATED
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
BOTH JUNCTIONS HEATED
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature
1. FR−4 @ Minimum Pad
Symbol
P_D
R_qJA
P_D
R_qJA
T_J, T_stg
Max
357 (Note 1)
2.9 (Note 1)
350 (Note 1)
500 (Note 1)
4.0 (Note 1)
250 (Note 1)
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE ORDERING INFORMATION, MARKING AND RESISTOR VALUES
Transistor 1 − PNP Transistor 2 − NPN
Device
Marking R1 (K) R2 (K) R1 (K) R2 (K)
Package
Shipping^†
EMC2DXV5T1G
UC
22
22
22
22
SOT−553*
4000 / Tape & Reel
EMC3DXV5T1G
EMC3DXV5T5G
U3
10
10
10
10
SOT−553*
SOT−553*
4000 / Tape & Reel
8000 / Tape & Reel
EMC4DXV5T1G
UE
10
47
47
47
SOT−553*
4000 / Tape & Reel
EMC5DXV5T1G
U5
4.7
10
47
47
SOT−553*
4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
250
200
150
100
R_qJA = 833°C/W
50
0
- 50
0
50
100
150
T_A, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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