EFC8811R_16 Datasheet, PDF (2/6 Pages) ON Semiconductor – Power MOSFET

EFC8811R
ELECTRICAL CHARACTERISTICS at Ta  25C (Note 2)
Parameter
Symbol
Conditions
Value
Unit
min
typ
max
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Source to Source On-State
Resistance
V(BR)SSS
ISSS
IGSS
VGS(th)
gFS
RSS(on)1
RSS(on)2
RSS(on)3
RSS(on)4
RSS(on)5
IS=1mA, VGS=0V
VSS=10V, VGS=0V
VGS=8V, VSS=0V
VSS=6V, IS=1mA
VSS=6V, IS=3A
IS=5A, VGS=4.5V
IS=5A, VGS=4.0V
IS=5A, VGS=3.8V
IS=5A, VGS=3.1V
IS=5A, VGS=2.5V
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
12
V
1 A
1 A
0.5
1.3 V
19
S
1.8
2.3
3.2 m
1.9
2.4
3.2 m
2.0
2.6
3.2 m
2.1
3.3
4.4 m
2.7
4.0
6.3 m
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
td(on)
80
ns
tr
570
ns
td(off)
VSS=6V, VGS=4.5V, IS=3A Test Circuit 6
38,000
ns
tf
17,700
ns
Total Gate Charge
Qg
VSS=6V, VGS=4.5V, IS=27A Test Circuit 7
100
nC
Forward Source to Source Voltage
VF(S-S)
IS=3A, VGS=0V
Test Circuit 8
0.75
1.2 V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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