EFC6604R_16 Datasheet, PDF (2/6 Pages) ON Semiconductor – Power MOSFET

EFC6604R
ELECTRICAL CHARACTERISTICS at Ta  25C (Note 2)
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Source to Source Breakdown
Voltage
V(BR)SSS IS=1mA, VGS=0V
Test Circuit 1
12
V
Zero-Gate Voltage Source Current
ISSS
VSS=10V, VGS=0V Test Circuit 1
1 A
Gate to Source Leakage Current
IGSS
VGS=±8V, VSS=0V Test Circuit 2
1.0 A
Gate Threshold Voltage
VGS(th)
VSS=6V, IS=1mA
Test Circuit 3
0.5
1.3 V
Forward Transconductance
gFS
VSS=6V, IS=3A
Test Circuit 4
13.7
S
RSS(on)1 IS=3A, VGS=4.5V
Test Circuit 5
6.0
7.5
9.0 m
Static Source to Source On-State
Resistance
RSS(on)2
RSS(on)3
RSS(on)4
IS=3A, VGS=4.0V
IS=3A, VGS=3.8V
IS=3A, VGS=3.1V
Test Circuit 5
Test Circuit 5
Test Circuit 5
6.4
8.1
9.7 m
6.7
8.4
10.0 m
7.8
9.8
12.7 m
RSS(on)5 IS=3A, VGS=2.5V
Test Circuit 5
10.0
12.6
17.7 m
Turn-ON Delay Time
td(on)
300
ns
Rise Time
Turn-OFF Delay Time
Fall Time
tr
td(off)
tf
VSS=6V, VGS=4.5V, IS=3A
Test Circuit 6
1200
ns
5200
ns
3900
ns
Total Gate Charge
Qg
VSS=6V, VGS=4.5V, IS=13A
Test Circuit 7
29
nC
Forward Source to Source Voltage
VF(S-S)
IS=3A, VGS=0V
Test Circuit 8
0.75
1.2 V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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