EFC4619R Datasheet, PDF (2/9 Pages) ON Semiconductor – Power MOSFET

Electrical Characteristics at Ta  25C
Parameter
Symbol
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Source to Source On-State
Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Forward Source to Source Voltage
V(BR)SSS
ISSS
IGSS
VGS(off)
| yfs |
RSS(on)1
RSS(on)2
RSS(on)3
RSS(on)4
RSS(on)5
td(on)
tr
td(off)
tf
Qg
VF(S-S)
EFC4619R
Conditions
IS=1mA, VGS=0V
VSS=20V, VGS=0V
VGS=±8V, VSS=0V
VSS=10V, IS=1mA
VSS=10V, IS=3A
IS=3A, VGS=4.5V
IS=3A, VGS=4.0V
IS=3A, VGS=3.7V
IS=3A, VGS=3.1V
IS=3A, VGS=2.5V
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
VSS=10V, VGS=4.5V, IS=3A Test Circuit 7
VSS=10V, VGS=4.5V, IS=6A Test Circuit 8
IS=3A, VGS=0V
Test Circuit 6
min
24
Ratings
typ
0.5
5.8
13.5
19.8
14
20.5
14.5
21
14.9
23
18.5
27
340
440
24400
22400
21.7
0.8
Unit
max
V
1 A
1 A
1.3 V
S
23 m
24 m
25.5 m
30 m
35 m
ns
ns
ns
ns
nC
1.2 V
No.A2179-2/9