EFC4612R-S Datasheet, PDF (2/7 Pages) ON Semiconductor – Power MOSFET

EFC4612R-S
ELECTRICAL CHARACTERISTICS at Ta  25C (Note 3)
Parameter
Symbol
Conditions
Value
Unit
min
typ
max
Source to Source Breakdown Voltage
V(BR)SSS IS = 1 mA, VGS = 0 V Test Circuit 1
24
V
Zero-Gate Voltage Source Current
ISSS
VSS = 20 V, VGS = 0 V Test Circuit 1
1 A
Gate to Source Leakage Current
IGSS
VGS = 8 V, VSS = 0 V Test Circuit 2
10 A
Gate Threshold Voltage
VGS(th)
VSS = 10 V, IS = 1 mA Test Circuit 3
0.5
1.3 V
Forward Transconductance
gFS
VSS = 10 V, IS = 3 A
Test Circuit 4
3.1
S
RSS(on)1 IS = 3 A, VGS = 4.5 V Test Circuit 5
24
39
45 m
Static Source to Source On-State
Resistance
RSS(on)2 IS = 3 A, VGS = 4.0 V Test Circuit 5
25
41
48 m
RSS(on)3 IS = 3 A, VGS = 3.7 V Test Circuit 5
27.5
43
50 m
RSS(on)4 IS = 3 A, VGS = 3.1 V Test Circuit 5
31.5
48
57 m
RSS(on)5 IS = 3 A, VGS = 2.5 V Test Circuit 5
33.5
58
72 m
Turn-ON Delay Time
td(on)
20
ns
Rise Time
Turn-OFF Delay Time
tr
td(off)
VSS = 10 V, VGS = 4.5 V
IS = 3 A
Test Circuit 6
230
ns
130
ns
Fall Time
tf
210
ns
Total Gate Charge
Qg
VSS = 10 V, VGS = 4.5 V
IS = 6 A
Test Circuit 7
7
nC
Forward Source to Source Voltage
VF(S-S)
IS = 3 A, VGS = 0 V
Test Circuit 8
0.8
1.2 V
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2