CPH6532 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

CPH6532
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=40V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=100mA
VCE=10V, IC=300mA
VCB=10V, f=1MHz
IC=500mA, IB=10mA
IC=300mA, IB=6mA
IC=500mA, IB=10mA
IC=10μA, IE=0A
IC=100μA, RBE=0Ω
IC=1mA, RBE=∞
IE=10μA, IC=0A
See specified Test Circuit.
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100μF
VBE= --5V
20IB1= --20IB2=IC=500mA
IC
OUTPUT
RL
+
470μF
VCC=25V
Ordering Information
Device
CPH6532-TL-E
Package
CPH6
Shipping
3,000pcs./reel
Ratings
min
typ
200
420
6
130
90
0.81
80
80
50
5
38
332
40
max
0.1
0.1
560
190
135
1.2
Unit
μA
μA
MHz
pF
mV
mV
V
V
V
V
V
ns
ns
ns
memo
Pb Free
IC -- VCE
1.0
0.9
10mA
0.8
8mA
0.7
6mA
0.6
4mA
0.5
0.4
2mA
0.3
0.2
0.1
0
IB=0mA
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT11441
1.0
VCE=2V
0.9
IC -- VBE
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base-to-Emitter Voltage, VBE -- V IT11416
No. A0522-2/6