CPH6445 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET

CPH6445
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
ID=0.7A, VGS=4.5V
ID=0.7A, VGS=4V
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=30V, VGS=10V, ID=3.5A
IS=3.5A, VGS=0V
Ratings
Unit
min
typ
max
60
V
1
mA
±10
mA
1.2
2.6
V
1.2
2.0
S
92
117 mW
120
168 mW
132
185 mW
310
pF
40
pF
25
pF
6.0
ns
5.5
ns
27
ns
13
ns
6.8
nC
1.1
nC
1.4
nC
0.85
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10ms
D.C.≤1%
G
VDD=30V
ID=1.5A
RL=20Ω
D
VOUT
CPH6445
P.G
50Ω
S
Ordering Information
Device
CPH6445-TL-E
CPH6445-TL-W
Package
CPH6
Shipping
3,000pcs./reel
memo
Pb-Free
Pb-Free and Halogen Free
No. A1532-2/5