CPH6020 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifi er

CPH6020
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Forward Transfer Gain
Noise Figure
Symbol
ICBO
IEBO
hFE
fT
| S21e |²
NF
Conditions
VCB=5V, IE=0A
VEB=1V, IC=0A
VCE=5V, IC=50mA
VCE=5V, IC=50mA
VCE=5V, IC=50mA, f=1GHz
VCE=1V, IC=10mA, f=1GHz
Ratings
Unit
min
typ
max
1.0
μA
1.0
μA
60
150
13
16
GHz
10
13.5
dB
1.2
1.8 dB
Notre) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
Ordering Information
Device
CPH6020-TL-E
Package
CPH6
Shipping
3,000pcs./reel
memo
Pb Free
IC -- VCE
140
1.5mA
120
1.2mA
100
0.9mA
80
60
0.6mA
40
0.3mA
20
0
IB=0mA
0
2
4
6
8
Collector-to-Emitter Voltage, VCE -- V IT14950
hFE -- IC
3
2
100
VCE=5V
1V
7
5
3
1.0
2 3 5 7 ₁₀
2 3 5 7 ₁₀₀
23
Collector Current, IC -- mA
IT14952
IC -- VBE
150
120
90
60
30
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE -- V IT14951
Cre -- VCB
5
f=1MHz
3
2
1.0
7
5
0.1
23
5 7 _1.0
23
5 7 ₁₀
Collector-to-Base Voltage, VCB -- V IT14953
No. A1548-2/6