CPH5504 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – High-Current Switching Applications

CPH5504
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=40V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=100mA
VCE=2V, IC=3A
VCE=10V, IC=500mA
VCB=10V, f=1MHz
IC=1A, IB=50mA
IC=2A, IB=100mA
IC=2A, IB=100mA
IC=10μA, IE=0A
IC=100μA,RBE=0Ω
IC=1mA, RBE=∞
IE=10μA, IC=0A
See specified Test Circuit.
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
VR
50Ω
IB1
IB2
RB
+
100μF
OUTPUT
RL
+
470μF
VBE= --5V
VCC=25V
10IB1= --10IB2=IC=1A
Ratings
min
typ
200
70
380
13
80
140
0.88
100
100
50
6
35
300
22
max
1
1
560
120
210
1.2
Unit
μA
μA
MHz
pF
mV
mV
V
V
V
V
V
ns
ns
ns
Ordering Information
Device
CPH5504-TL-E
Package
CPH5
Shipping
3,000pcs./reel
memo
Pb Free
No.6793-2/7