CPH3457 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

CPH3457
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Forward Diode Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td_(off)
t_f
Qg
Qgs
Qgd
VSD
ID=1mA, V_GS=0V
VDS=30V, V_GS=0V
VGS=±8V, V_DS=0V
VDS=10V, I_D=1mA
VDS=10V, I_D=1.5A
ID=1.5A, V_GS=4.5V
ID=0.75A, V_GS=2.5V
ID=0.3A, V_GS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=15V, V_GS=4.5V, I_D=3A
VDS=15V, V_GS=4.5V, I_D=3A
VDS=15V, V_GS=4.5V, I_D=3A
IS=3A, V_GS=0V
Value
Unit
min
typ
max
30
V
1
mA
±10
mA
0.4
1.3
V
2.7
S
73
95 mW
95
133 mW
135
203 mW
265
pF
35
pF
28
pF
5.1
ns
10
ns
137
ns
36
ns
3.5
nC
0.57
nC
0.93
nC
0.87
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VDD=15V
VIN
4.5V
0V
PW=10ms
D.C.≤1%
VIN
G
ID=1.5A
RL=10Ω
D
VOUT
P.G
50Ω
S ^CPH3457
Ordering Information
Device
CPH3457-TL-H
CPH3457-TL-W
Package
CPH3
Shipping
3,000pcs./reel
memo
Pb-Free and Halogen Free
No. A1804-2/5