CPH3448 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

CPH3448
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, V_GS=0V
VDS=30V, V_GS=0V
VGS=±8V, V_DS=0V
VDS=10V, I_D=1mA
VDS=10V, I_D=2A
ID=2A, V_GS=4.5V
ID=1A, V_GS=2.5V
ID=0.5A, V_GS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=15V, V_GS=4.5V, I_D=4A
VDS=15V, V_GS=4.5V, I_D=4A
VDS=15V, V_GS=4.5V, I_D=4A
IS=4A, V_GS=0V
Ratings
Unit
min
typ
max
30
V
1
mA
±10
mA
0.4
1.3
V
3.4
S
38
50 mW
51
72 mW
80
130 mW
430
pF
59
pF
38
pF
10
ns
41
ns
36
ns
37
ns
4.7
nC
0.8
nC
1.1
nC
0.82
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
4.5V
0V
PW=10ms
D.C.≤1%
VIN
G
VDD=15V
ID=2A
RL=7.5Ω
D
VOUT
P.G
50Ω
S ^CPH3448
Ordering Information
Device
CPH3448-TL-H
CPH3448-TL-W
Package
CPH3
Shipping
3,000pcs./reel
memo
Pb-Free and Halogen Free
No. A1648-2/5