CM6320 Datasheet, PDF (2/4 Pages) ON Semiconductor – EMI Filter with ESD Protection for SIM Card Applications

CM6320
PACKAGE / PINOUT DIAGRAMS
Orientation
Marking
A
Top View
(Bumps Down View)
1234 5
+
Bottom View
(Bumps Up View)
54 32 1
A
B
B
C
6320
C
D
D
E
E
A1 Indicator
Table 1. PIN DESCRIPTIONS
A5 = Line 1
A4 = Line 2
B5 = Line 3
B4 = Line 4
C5 = Line 5
C4 = Line 6
D5 = Line 7
D4 = Line 8
E5 = Line 9
E4 = Line 10
A3 = GND
C3 = GND
D3 = GND
E3 = GND
A2 = Line 1
B2 = Line 3
C2 = Line 5
D2 = Line 7
E2 = Line 9
A1 = Line 2
B1 = Line 4
C1 = Line 6
D1 = Line 8
E1 = Line 10
ELECTRICAL SPECIFICATIONS AND CONDITIONS
Table 2. PARAMETERS AND OPERATING CONDITIONS
Parameter
Storage Temperature Range
Operating Temperature Range
Power Dissipation at 70°C per Channel
Rating
–55 to +150
–40 to +85
60
Units
°C
°C
mW
Table 3. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
R
Resistance
C
V_BR
I_LEAK
V_ESD
Capacitance per Line
Breakdown Voltage
Leakage Current per Channel
ESD Protection Peak Discharge Voltage
a) Contact Discharge per IEC 61000−4−2
standard
b) Air Discharge per IEC 61000−4−2 standard
At 1 MHz, V_IN = 0 V; (Note 2)
I_R = ±1 mA
V_IN = 3.0 V
(Notes 2 and 3)
1. All parameters specified at T_A = 25°C unless otherwise noted.
2. These parameters guaranteed by design and characterization.
3. Standard IEC 61000−4−2 with C_Discharge = 150 pF, R_Discharge = 330 W.
Min Typ Max Units
56
70
84
W
30
pF
±6 ±7.8 ±10
V
10
100
nA
kV
±15
±15
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