CM6136 Datasheet, PDF (2/4 Pages) ON Semiconductor – Single-Channel Transient Voltage Suppressor

CM6136
ELECTRICAL SPECIFICATIONS AND CONDITIONS
Table 2. ABSOLUTE RATINGS
Parameter
Failing to nonconductive, I²t − from A1 pin to device ground
(Maximum I_PP value using 10/1000 ms pulse). See Notes 1 and 2.
Failing to nonconductive, I²t − from A2 pin to device ground
(Maximum I_PP value using 10/1000 ms pulse). See Notes 1 and 2.
1. The device must not burn to open−circuit, when the value is below maximum I_PP.
2. This parameter is characterized at 25°C using an ON Semiconductor−specific test board.
Table 3. PARAMETERS AND OPERATING CONDITIONS
Parameter
Storage Temperature Range
Operating Temperature Range
Rating
4
50
Rating
–55 to +150
–30 to +85
Units
A
A
Units
°C
°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Min Typ Max Units
R
Resistance A1 − A2
B1 and B2 floating (Note 2)
50
mW
R_OPEN
t_FUSE
t_LIFE
Resistance after open fuse
Fusing time
Fuse life time
B1 and B2 floating
B1 and B2 floating; I = 5 A (Note 3)
B1 and B2 floating; I = 2 A (Notes 3, 4
and 9)
1
4000
MW
100 ms
Hours
I_OFF Stand−off quiescent current
V_BR Break down voltage
From A1 pin to B1 and B2 pins;
Stand−off voltage V_OFF = 12 V
From A1 pin to B1 and B2 pins;
15.5
Break down current I_BR = 20 mA
(Note 6)
100
nA
V
V_CL Clamping voltage during transient
From A1 pin to B1 and B2 pins;
Clamping current I_CL = 1 A
(Notes 6 and 7)
19.5
V
V_F
C_L1
C_L2
V_ESD
Forward voltage
Line capacitance
ESD protection peak discharge
Voltage at A1 pin or A2 to B1 and B2
a) Contact Discharge per IEC 61000−4−2
standard
b) Air Discharge per IEC 61000−4−2 standard
From A1 pin to B1 and B2 pins;
Forward current I_F = 850 mA
V_BIAS = 0 V
V_BIAS = 5 V
(Note 8)
1.3
V
190
pF
73
92
pF
kV
±30
±30
f_C
Minimum attenuation
Freq = 80 MHz − 1 GHz
Freq = 1 − 4 GHz
R_SOURCE = R_LOAD = 50 W
dB
8
20
1. All parameters specified for T_A = 25°C unless otherwise noted. Characterization data for DC parameters is taken from −30°C to 85°C.
2. This parameter is measured using low current to avoid self−heating.
3. These parameters are characterized using ON Semiconductor−specific test boards.
4. Fuse is considered failed when its resistance is higher than 1 W.
5. Cumulative distribution of V_BR between 15.5 V and 16.0 V is about 4.5%.
6. Transient: 8 x 20 ms current pulse.
7. Cumulative distribution of V_CL between 19.0 V and 19.5 V is about 4.5%.
8. Standard IEC 61000−4−2 with C_Discharge = 150 pF, R_Discharge = 330 W.
9. Fuse lifetime is extrapolated from Accelerated Life Test (ALT) at 125°C.
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