CM1773-5006YL Datasheet, PDF (2/3 Pages) ON Semiconductor – 1-Channel ESD Protector

CM1773−5006YL
MAXIMUM RATINGS / OPERATING CONDITIONS
Parameter
Rating
Unit
Operating Temperature Range
−40 to +150
°C
Storage Temperature Range
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL OPERATING CHARACTERISTICS
Symbol
I_LEAK
Leakage Current
Parameter
V_BD
Breakdown Voltage on Signal Node
Test Conditions
V = +180 V, T_A = 25°C
V = −180 V, T_A = 25°C
T_A = 25°C;
at 100 mA
at −100 mA
V_ESD
ESD Protection − Withstand Voltage
(Note 1)
Human Body Model MIL−STD−883 (Method 3015)
1. Per the standard, 3 positive and 3 negative strikes are applied, one second apart.
Min Typ
+200
−280
+240
−240
5.0
Max
+1.0
−1.0
+280
−200
Unit
mA
V
V
kV
MECHANICAL DETAILS
MECHANICAL SPECIFICATIONS (Note 2)
Parameter
Condition
Unit
Composition
Silicon wafer, N+ doped
Die Shape
Rectangular
Die Length
480 ± 10
mm
Die Width
440 ± 10
mm
Thickness
6.0 ± 0.5
mils
Top Pad Length (a)
328 ± 5.0
mm
Top Pad Width (b)
100 ± 5.0
mm
Top Pad Spacing (d)
105 ± 5.0
mm
Top Pad Composition
Au (Gold)
Top Pad Thickness
3 ± 1.5
mm
Back Metal (backside)
None (Silicon Substrate)
2. Dimensions are typical values if tolerances are not specified.
Figure 2. Sawn Die Diagram
http://onsemi.com
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