CM1771 Datasheet, PDF (2/3 Pages) ON Semiconductor – 1-Channel ESD Protector

CM1771
SPECIFICATIONS
Table 2. OPERATING CONDITIONS
Parameter
Operating Temperature Range
Storage Temperature Range
Rating
−40 to +150
−55 to +150
Units
°C
°C
Table 3. ELECTRICAL OPERATING CHARACTERISTICS
Symbol
Parameter
Conditions
I_LEAK
V_BD
V_ESD
Leakage Current
Breakdown Voltage on Signal Node
Positive polarity on Signal Node
Negative polarity on Signal Node
ESD Voltage Rating
Contact Discharge per Human Body Model,
MIL−STD−883 (Method 3015)
Contact Discharge per IEC61000−4−2 Standard
V = +85 V, T_A = 25°C
T_A = 25°C
at 1.0 mA (I_CL+)
at −1.0 mA (I_CL−)
(Notes 1 and 2)
1. Per the standard, 3 positive and 3 negative strikes are applied, one second apart.
2. V_ESD is the ESD capability for the protection device only.
Min Typ Max Units
1.0 mA
V
+90 +100 +110
−80
−60
kV
±6
±3
MECHANICAL DETAILS
Table 4. MECHANICAL SPECIFICATIONS (Note 1)
Parameter
Condition
Unit
Composition
Silicon Wafer,
P+ doped
Die Shape
Rectangular
Length (Sawn)
480±10
mm
Width (Sawn)
440±10
mm
BG Thickness
6
mils
Top Pad Length (a)
356
mm
Top Pad Width (b)
117
mm
Top Pads Spacing
103
mm
Top Pad Composition
Au (Gold)
Top Pad Thickness
3
mm
Back Metal (Underside)
None (silicon
Substrate)
1. Dimensions are typical values if tolerances are not specified.
SAWN DIE DIAGRAM
Package Dimensions
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