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| CM1282-01D1 Datasheet, PDF (2/3 Pages) ON Semiconductor – 1-Channel Ultra-Low Capacitance ESD Protection Device | |||
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CM1282â01D1
PACKAGE / PINOUT DIAGRAM
Bottom View
Pin 1
Pin 2
Top View
Pin 1
Marking
94
Table 1. PIN DESCRIPTIONS
Pin
Name
1
VN
2
CH
1âChannel DSN2 Package
Type
GND
I/O
Description
Ground
ESD Channel
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
Storage Temperature Range
â65 to +150
ï°C
Package Power Dissipation
450
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature
Rating
â40 to +85
Units
ï°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
VBR
ILEAK
CIN
VESD
Reverse Breakdown Voltage
Channel Leakage Current
Channel Input Capacitance
ESD Protection (Peak Discharge Voltage
at any Channel Input, in System):
Contact Discharge per IEC 61000â4â2 Standard
IIN = ï±10 mA
VIN = ï±5 V
At 1 MHz, VIN = 0 V
(Note 2)
VCL
Channel Clamp Voltage
IPP = ï±1 A, tP = 8/20 ms
RDYN Dynamic Resistance
IPP = ï±1 A, tP = 8/20 ms
1. All parameters specified at TA = 25ï°C unless otherwise noted.
2. Standard IEC 61000â4â2 with CDischarge = 150 pF, RDischarge = 330 W
Min Typ Max Units
ï±7.5 ï±9.0 ï±11.0 V
0.1 1.0 mA
0.5 0.6 pF
8
kV
11
V
1.2
W
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