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CM1248-08DE_11 Datasheet, PDF (2/4 Pages) ON Semiconductor – Low Capacitance Transient Voltage Suppressors
CM1248−08DE
PACKAGE / PINOUT DIAGRAMS
Top View
CH1 (1)
CH2 (2)
CH3 (3)
CH4 (4)
CH8 (8)
CH7 (7)
CH6 (6)
CH5 (5)
8−Lead uDFN
CM1248−08DE
Table 1. PIN DESCRIPTIONS
Pins
(Refer to package / pinout diagrams)
(Refer to package / pinout diagrams)
Name
CHx
VN
Description
The cathode of the respective TVS diode, which should be connected to the node
requiring transient voltage protection.
The anode of the TVS diodes.
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
Storage Temperature Range
−65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature
Rating
−40 to +85
Units
°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
CIN
Channel Input Capacitance
TA = 25°C, 0 VDC, 1 MHz
0 VDC, 1 MHz
DCIN
VRSO
ILEAK
VSIG
VESD
Differential Channel I/O to GND Capacitance
Reverse Stand−off Voltage
Leakage Current
Small Signal Clamp Voltage
Positive Clamp
Negative Clamp
ESD Withstand Voltage
Contact Discharge per IEC 61000−4−2 standard
TA = 25°C, 2.5 VDC, 1 MHz
IR = 10 mA, TA = 25°C
IR = 1 mA, TA = 25°C
VIN = 5.0 VDC, TA = 25°C
VIN = 5.0 VDC
I = 10 mA, TA = 25°C
I = −10 mA, TA = 25°C
TA = 25°C
(Notes 2 and 3)
RD
Diode Dynamic Resistance
Forward Conduction
Reverse Conduction
TA = 25°C, IPP = 1 A, tP = 8/20 ms
1. All parameters specified at TA = −40°C to +85°C unless otherwise noted.
2. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VN grounded.
3. These measurements performed with no external capacitor on CHX.
Min Typ Max Unit
10
pF
7
15
pF
0.19
pF
5.5
V
6.1
V
0.25 mA
0.75 mA
V
6.8
−0.89
kV
±15
W
0.57
1.36
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