CAV25M01 Datasheet, PDF (2/13 Pages) ON Semiconductor – 1 Mb SPI Serial CMOS EEPROM

CAV25M01
25M01A
AYMXXX
(SOIC−8)
25M01A = Specific Device Code
A = Assembly Location
Y = Production Year (Last Digit)
M = Production Month (1−9, O, N, D)
XXX = Last Three Digits of
XXX = Assembly Lot Number
MARKING DIAGRAMS
SM1A
AYMXXX
G
(TSSOP−8)
SM1A
A
Y
M
XXX
G
= Specific Device Code
= Assembly Location
= Production Year (Last Digit)
= Production Month (1−9, O, N, D)
= Last Three Digits of
= Assembly Lot Number
= Pb−Free Microdot
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Ratings
Units
Operating Temperature
−45 to +130
°C
Storage Temperature
−65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
−0.5 to +6.5
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V_CC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than V_CC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min
Units
N_END (Note 3) Endurance
1,000,000
Program / Erase Cycles
T_DR
Data Retention
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, V_CC = 5 V, 25°C
4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte
has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes in order to benefit
from the maximum number of write cycles.
Table 3. D. C. OPERATING CHARACTERISTICS (V_CC = 2.5 V to 5.5 V, T_A = −40°C to +125°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min
Max
Units
I_CCR
Supply Current
(Read Mode)
Read, SO open
f_SCK = 10 MHz
3
mA
I_CCW
Supply Current
(Write Mode)
Write, CS = V_CC
3
mA
I_SB1
Standby Current
V_IN = GND or V_CC, CS = V_CC, WP = V_CC,
HOLD = V_CC, V_CC = 5.5 V
I_SB2
Standby Current
V_IN = GND or V_CC, CS = V_CC, WP = GND,
HOLD = GND, V_CC = 5.5 V
I_L
Input Leakage Current V_IN = GND or V_CC
I_LO
Output Leakage
CS = V_CC, V_OUT = GND or V_CC
Current
3
mA
5
mA
−2
2
mA
−2
2
mA
V_IL
Input Low Voltage
V_IH
Input High Voltage
V_OL
Output Low Voltage
I_OL = 3.0 mA
V_OH
Output High Voltage
I_OH = −1.6 mA
−0.5
0.3V_CC
V
0.7V_CC
V_CC + 0.5
V
0.4
V
V_CC − 0.8V
V
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