CAV24M01 Datasheet, PDF (2/11 Pages) ON Semiconductor – CMOS Serial EEPROM

24M01A
AYMXXX
(SOIC−8)
24M01A = Specific Device Code
A = Assembly Location
Y = Production Year (Last Digit)
M = Production Month (1−9, O, N, D)
XXX = Last Three Digits of
XXX = Assembly Lot Number
CAV24M01
MARKING DIAGRAMS
M01C
AYMXXX
G
(TSSOP−8)
M01C
A
Y
M
XXX
G
= Specific Device Code
= Assembly Location
= Production Year (Last Digit)
= Production Month (1−9, O, N, D)
= Last Three Digits of
= Assembly Lot Number
= Pb−Free Microdot
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Storage Temperature
–65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
–0.5 to +6.5
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V_CC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than V_CC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min
Units
N_END (Notes 3, 4) Endurance
1,000,000
Program/Erase Cycles
T_DR
Data Retention
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Test Condition: Page Mode, V_CC = 5 V, 25°C.
4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte
has to be written, 4 bytes (including the ECC bits) are re-programmed. It is recommended to write by multiple of 4 bytes in order to benefit
from the maximum number of write cycles.
Table 3. D.C. OPERATING CHARACTERISTICS V_CC = 2.5 V to 5.5 V, T_A = −40°C to +125°C, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Max
Units
I_CCR
I_CCW
I_SB
I_L
V_IL1
V_IH1
V_OL1
Read Current
Write Current
Standby Current
I/O Pin Leakage
Input Low Voltage
Input High Voltage
Output Low Voltage
Read, f_SCL = 400 kHz / 1 MHz
V_CC = 5.5 V
All I/O Pins at GND or V_CC
Pin at GND or V_CC
T_A = −40°C to +125°C
T_A = −40°C to +125°C
I_OL = 3.0 mA
−0.5
0.7 V_CC
1
mA
5.0
mA
5
mA
2
mA
0.3 V_CC
V
V_CC + 0.5
V
0.4
V
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