CAT4201_15 Datasheet, PDF (2/12 Pages) ON Semiconductor – High Efficiency Step Down LED Driver

CAT4201
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
VBAT, SW, CTRL
−0.3 to +40
V
RSET
−0.3 to +5
V
Switch SW peak current
1
A
Storage Temperature Range
−65 to +160
_C
Junction Temperature Range
−40 to +150
_C
Lead Temperature
300
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 2. RECOMMENDED OPERATING CONDITIONS
Parameters
VBAT voltage (Notes 1, 2)
Ratings
6.5 to 36 (Note 1)
Units
V
SW voltage
0 to 36
V
Ambient Temperature Range
−40 to +125
_C
LED Current
50 to 350
mA
Switching Frequency
50 to 1000
kHz
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
1. The VBAT pin voltage should be at least 3 V greater than the total sum of the LED forward voltages in order to operate at nominal LED current.
2. During power−up, the slew rate of the input supply should be greater than 1 ms for every 5 V increase of VBAT.
Table 3. ELECTRICAL CHARACTERISTICS
(V_IN = 13 V, ambient temperature of 25°C (over recommended operating conditions unless otherwise specified))
Symbol
Parameter
Conditions
Min
Typ
Max Units
I_Q
Operating Supply Current on VBAT pin
0.4
1
mA
I_SD
Idle Mode Supply Current on VBAT pin
CTRL = GND
V_FB
RSET Pin Voltage
2 LEDs with I_LED = 300 mA
I_LED
Programmed LED Current
R1 = 33 kW
R1 = 10 kW
R1 = 8.25 kW
90
mA
1.15
1.2
1.25
V
100
mA
270
300
330
350
V_{CTRL−FULL}
V_CTRL−EN
V_CTRL−SD
I_CTRL
CTRL Voltage for 100% Brightness
CTRL Voltage to Enable LEDs
CTRL Voltage to Shutdown LEDs
CTRL pin input bias
LED enable voltage threshold
LED disable voltage threshold
V_CTRL = 3 V
V_CTRL = 12 V
2.6
3.1
V
0.9
1.2
V
0.4
0.9
V
40
80
mA
200
R_SW
T_SD
T_HYST
h
Switch “On” Resistance
Thermal Shutdown
Thermal Hysteresis
Efficiency
I_SW = 300 mA
Typical Application Circuit
0.9
1.5
W
150
°C
20
°C
86
%
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2