CAT34TS04VP2GT4A Datasheet, PDF (2/18 Pages) ON Semiconductor – Digital Output Temperature Sensor with On-board SPD EEPROM

CAT34TS04
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
Operating Temperature
−45 to +130
°C
Storage Temperature
−65 to +150
°C
Voltage on any pin (except A₀) with respect to Ground (Note 1)
−0.5 to +6.5
V
Voltage on pin A₀ with respect to Ground
−0.5 to +10.5
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V_CC + 0.5 V. The A₀ pin can be raised to a HV level for SWP
command execution. SCL and SDA inputs can be raised to the maximum limit, irrespective of V_CC.
Table 2. RELIABILITY CHARACTERISTICS
Symbol
Parameter
N_END (Note 2)
Endurance (EEPROM)
T_DR
Data Retention (EEPROM)
2. Page Mode, V_CC = 2.5 V, 25°C
Min
1,000,000
100
Units
Write Cycles
Years
Table 3. TEMPERATURE CHARACTERISTICS (V_CC = 2.2 V to 3.6 V, T_A = −20°C to +125°C, unless otherwise specified)
Parameter
Test Conditions/Comments
Max
Unit
Temperature Reading Error
ADC Resolution
+75°C ≤ T_A ≤ +95°C, active range
+40°C ≤ T_A ≤ +125°C, monitor range
−20°C ≤ T_A ≤ +125°C, sensing range
±1.0
°C
±2.0
°C
±3.0
°C
12
Bits
Temperature Resolution
0.0625
°C
Conversion Time
100
ms
Thermal Resistance (Note 3) q_JA
Junction−to−Ambient (Still Air)
92
°C/W
3. Power Dissipation is defined as P_J = (T_J − T_A)/q_JA, where T_J is the junction temperature and T_A is the ambient temperature. The thermal
resistance value refers to the case of a package being used on a standard 2−layer PCB.
Table 4. D.C. OPERATING CHARACTERISTICS (V_CC = 2.2 V to 3.6 V, T_A = −20°C to +125°C, unless otherwise specified)
Symbol
Parameter
Test Conditions/Comments
Min
Max
Unit
I_CC
Supply Current
TS active, SPD and Bus idle
SPD Write, TS shut−down
1000
mA
1000
mA
I_SHDN
I_LKG
V_IL
Standby Current
I/O Pin Leakage Current
Input Low Voltage
TS shut−down; SPD and Bus idle
Pin at GND or V_CC
−0.5
10
mA
2
mA
0.3 x V_CC
V
V_IH
Input High Voltage
0.7 x V_CC
V_CC + 0.5
V
V_OL1 (Note 4)
Output Low Voltage
I_OL = 3 mA, V_CC > 2.2 V
0.4
V
V_OL2
Output Low Voltage
I_OL = 1 mA, V_CC < 2.2 V
0.2
V
4. The device is able to handle R_L values corresponding to the specified rise time (see Figure 2).
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