CAT25M01YI-GT3 Datasheet, PDF (2/14 Pages) ON Semiconductor – 1 Mb SPI Serial CMOS EEPROM

CAT25M01
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Ratings
Units
Operating Temperature
−45 to +130
°C
Storage Temperature
−65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
−0.5 to +6.5
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V_CC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than V_CC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min
Units
N_END (Note 3) Endurance
1,000,000
Program / Erase Cycles
T_DR
Data Retention
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, V_CC = 5 V, 25°C
4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte
has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes in order to benefit
from the maximum number of write cycles.
Table 3. D. C. OPERATING CHARACTERISTICS
(V_CC = 1.8 V to 5.5 V, T_A = −40°C to +85°C and V_CC = 2.5 V to 5.5 V, T_A = −40°C to +125°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min
Max
I_CCR
Supply Current
Read, SO open /
V_CC = 1.8 V, f_SCK = 5 MHz
1.2
(Read Mode)
−40°C to +85°C
V_CC = 2.5 V, f_SCK = 10 MHz
1.8
V_CC = 5.5 V, f_SCK = 10 MHz
3
Read, SO open /
2.5 V < V_CC < 5.5 V,
3
−40°C to +125°C
f_SCK = 10 MHz
I_CCW
Supply Current
Write, CS = V_CC/
1.8 V < V_CC < 5.5 V
3
(Write Mode)
−40°C to +85°C
Write, CS = V_CC/
2.5 V < V_CC < 5.5 V
3
−40°C to +125°C
I_SB1
I_SB2
I_L
I_LO
V_IL1
V_IH1
V_IL2
V_IH2
V_OL1
V_OH1
V_OL2
V_OH2
Standby Current
Standby Current
Input Leakage Current
Output Leakage
Current
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
V_IN = GND or V_CC,
CS = V_CC, WP = V_CC,
HOLD = V_CC,
V_CC = 5.5 V
T_A = −40°C to +85°C
T_A = −40°C to +125°C
V_IN = GND or V_CC,
CS = V_CC, WP = GND,
HOLD = GND,
V_CC = 5.5 V
T_A = −40°C to +85°C
T_A = −40°C to +125°C
V_IN = GND or V_CC
CS = V_CC
V_OUT = GND or V_CC
V_CC ≥ 2.5 V
V_CC ≥ 2.5 V
V_CC < 2.5 V
V_CC < 2.5 V
V_CC ≥ 2.5 V, I_OL = 3.0 mA
V_CC ≥ 2.5 V, I_OH = −1.6 mA
V_CC < 2.5 V, I_OL = 150 mA
V_CC < 2.5 V, I_OH = −100 mA
1
3
3
5
−2
2
−2
2
−0.5
0.7V_CC
−0.5
0.75V_CC
V_CC − 0.8V
V_CC − 0.2V
0.3V_CC
V_CC + 0.5
0.25V_CC
V_CC + 0.5
0.4
0.2
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
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