CAT25128_14 Datasheet, PDF (2/20 Pages) ON Semiconductor – 128-Kb SPI Serial CMOS EEPROM

CAT25128
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Operating Temperature
−45 to +130
°C
Storage Temperature
−65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
−0.5 to +6.5
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V_CC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than V_CC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min
Units
N_END (Notes 3, 4) Endurance
1,000,000
Program / Erase Cycles
T_DR
Data Retention
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, V_CC = 5 V, 25°C.
4. The new product revision (E) uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when
a single byte has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes in order
to benefit from the maximum number of write cycles.
Table 3. D.C. OPERATING CHARACTERISTICS − MATURE PRODUCT
(V_CC = 1.8 V to 5.5 V, T_A = −40°C to +85°C and V_CC = 2.5 V to 5.5 V, T_A = −40°C to +125°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
Units
I_CCR
Supply Current
(Read Mode)
Read, V_CC = 5.5 V,
SO open
10 MHz / −40°C to 85°C
5 MHz / −40°C to 125°C
2
mA
2
mA
I_CCW
Supply Current
(Write Mode)
Write, V_CC = 5.5 V,
SO open
10 MHz / −40°C to 85°C
5 MHz / −40°C to 125°C
4
mA
4
mA
I_SB1
Standby Current
V_IN = GND or V_CC, CS = V_CC,
WP = V_CC, HOLD = V_CC,
V_CC = 5.5 V
T_A = −40°C to +85°C
T_A = −40°C to +125°C
1
mA
3
mA
I_SB2
Standby Current
V_IN = GND or V_CC, CS = V_CC,
WP = GND, HOLD = GND,
V_CC = 5.5 V
T_A = −40°C to +85°C
T_A = −40°C to +125°C
4
mA
5
mA
I_L
Input Leakage Current V_IN = GND or V_CC
−2
2
mA
I_LO
Output Leakage
Current
CS = V_CC,
V_OUT = GND or V_CC
T_A = −40°C to +85°C
−1
T_A = −40°C to +125°C
−1
1
mA
2
mA
V_IL
Input Low Voltage
−0.5
0.3 V_CC
V
V_IH
Input High Voltage
0.7 V_CC
V_CC + 0.5
V
V_OL1
Output Low Voltage
V_CC > 2.5 V, I_OL = 3.0 mA
0.4
V
V_OH1 Output High Voltage
V_CC > 2.5 V, I_OH = −1.6 mA
V_CC − 0.8 V
V
V_OL2
Output Low Voltage
V_CC > 1.8 V, I_OL = 150 mA
0.2
V
V_OH2 Output High Voltage
V_CC > 1.8 V, I_OH = −100 mA
V_CC − 0.2 V
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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