CAT24C64 Datasheet, PDF (2/15 Pages) Catalyst Semiconductor – 64-Kb I2C CMOS Serial EEPROM

CAT24C64
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Storage Temperature
–65 to +150
°C
Voltage on Any Pin with Respect to Ground (Note 1)
–0.5 to +6.5
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V_CC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than V_CC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min
Units
N_END (Note 3) Endurance
1,000,000
Program/Erase Cycles
T_DR
Data Retention
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, V_CC = 5 V, 25°C.
Table 3. D.C. OPERATING CHARACTERISTICS
(V_CC = 1.8 V to 5.5 V, T_A = −40°C to +125°C and V_CC = 1.7 V to 5.5 V, T_A = −40°C to +85°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
I_CCR
Read Current
Read, f_SCL = 400 kHz
1
I_CCW
Write Current
Write, f_SCL = 400 kHz
2
I_SB
Standby Current
All I/O Pins at GND or V_CC
T_A = −40°C to +85°C
1
V_CC ≤ 3.3 V
T_A = −40°C to +85°C
3
V_CC > 3.3 V
I_L
V_IL
V_IH
V_OL1
V_OL2
I/O Pin Leakage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
Pin at GND or V_CC
V_CC < 2.5 V, I_OL = 3.0 mA
V_CC < 2.5 V, I_OL = 1.0 mA
T_A = −40°C to +125°C
−0.5
V_CC x 0.7
5
2
V_CC x 0.3
V_CC + 0.5
0.4
0.2
Units
mA
mA
mA
mA
V
V
V
V
Table 4. PIN IMPEDANCE CHARACTERISTICS
(V_CC = 1.8 V to 5.5 V, T_A = −40°C to +125°C and V_CC = 1.7 V to 5.5 V, T_A = −40°C to +85°C, unless otherwise specified.)
Symbol
Parameter
Conditions
Max
Units
C_IN (Note 4) SDA I/O Pin Capacitance
V_IN = 0 V
8
pF
C_IN (Note 4) Input Capacitance (other pins)
V_IN = 0 V
6
pF
I_WP (Note 5) WP Input Current
V_IN < V_IH, V_CC = 5.5 V
130
mA
V_IN < V_IH, V_CC = 3.3 V
120
V_IN < V_IH, V_CC = 1.8 V
80
V_IN > V_IH
2
4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
5. When not driven, the WP pin is pulled down to GND internally. For improved noise immunity, the internal pull−down is relatively strong;
therefore the external driver must be able to supply the pull−down current when attempting to drive the input HIGH. To conserve power, as
the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x V_CC), the strong pull−down reverts to a weak current source.
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