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BU323Z_09 Datasheet, PDF (2/6 Pages) ON Semiconductor – NPN Silicon Power Darlington
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BU323Z
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS (1)
Collector−Emitter Clamping Voltage (IC = 7.0 A)
(TC = − 40°C to +125°C)
Collector−Emitter Cutoff Current
(VCE = 200 V, IB = 0)
Emitter−Base Leakage Current
(VEB = 6.0 Vdc, IC = 0)
VCLAMP
350
ICEO
—
IEBO
—
ON CHARACTERISTICS (1)
Base−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 100 mAdc)
(IC = 10 Adc, IB = 0.25 Adc)
VBE(sat)
—
—
Collector−Emitter Saturation Voltage
(IC = 7.0 Adc, IB = 70 mAdc)
(IC = 8.0 Adc, IB = 0.1 Adc)
(IC = 10 Adc, IB = 0.25 Adc)
VCE(sat)
—
(TC = 125°C)
—
—
(TC = 125°C)
—
—
Base−Emitter On Voltage
(IC = 5.0 Adc, VCE = 2.0 Vdc)
(IC = 8.0 Adc, VCE = 2.0 Vdc)
VBE(on)
(TC = − 40°C to +125°C)
1.1
1.3
Diode Forward Voltage Drop
(IF = 10 Adc)
VF
—
DC Current Gain
(IC = 6.5 Adc, VCE = 1.5 Vdc)
(IC = 5.0 Adc, VCE = 4.6 Vdc)
hFE
(TC = − 40°C to +125°C)
150
500
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
—
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
Input Capacitance
(VEB = 6.0 V)
Cib
—
CLAMPING ENERGY (see notes)
Repetitive Non−Destructive Energy Dissipated at turn−off:
(IC = 7.0 A, L = 8.0 mH, RBE = 100 Ω) (see Figures 2 and 4)
WCLAMP
200
SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH)
Fall Time
Storage Time
Cross−over Time
(IC = 6.5 A, IB1 = 45 mA,
VBE(off) = 0, RBE(off) = 0,
VCC = 14 V, VZ = 300 V)
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle = 2.0%.
tfi
—
tsi
—
tc
—
Typ
Max
Unit
—
450
Vdc
—
100
μAdc
—
50
mAdc
Vdc
—
2.2
—
2.5
Vdc
—
1.6
—
1.8
—
1.8
—
2.1
—
1.7
Vdc
—
2.1
—
2.3
—
2.5
Vdc
—
—
—
—
3400
—
2.0
MHz
—
200
pF
—
550
pF
—
—
mJ
625
—
ns
10
30
μs
1.7
—
μs
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