BSS138LT1_11 Datasheet, PDF (2/5 Pages) ON Semiconductor – Power MOSFET 200 mA, 50 V

BSS138LT1
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 250 mAdc)
Zero Gate Voltage Drain Current
(V_DS = 25 Vdc, V_GS = 0 Vdc, 25°C)
(V_DS = 50 Vdc, V_GS = 0 Vdc, 25°C)
(V_DS = 50 Vdc, V_GS = 0 Vdc, 150°C)
Gate−Source Leakage Current (V_GS = ± 20 Vdc, V_DS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate−Source Threshold Voltage
(V_DS = V_GS, I_D = 1.0 mAdc)
Static Drain−to−Source On−Resistance
(V_GS = 2.75 Vdc, I_D < 200 mAdc, T_A = −40°C to +85°C)
(V_GS = 5.0 Vdc, I_D = 200 mAdc)
Forward Transconductance
(V_DS = 25 Vdc, I_D = 200 mAdc, f = 1.0 kHz)
V_(BR)DSS
50
I_DSS
−
−
−
I_GSS
−
−
−
Vdc
mAdc
−
0.1
−
0.5
−
5.0
−
±0.1
mAdc
V_GS(th)
r_DS(on)
g_fs
0.5
−
−
5.6
−
−
100
−
1.5
Vdc
W
10
3.5
−
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V_DS = 25 Vdc, V_GS = 0, f = 1 MHz)
Output Capacitance
(V_DS = 25 Vdc, V_GS = 0, f = 1 MHz)
Transfer Capacitance
(V_DG = 25 Vdc, V_GS = 0, f = 1 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Turn−Off Delay Time
(V_DD = 30 Vdc, I_D = 0.2 Adc,)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
C_iss
C_oss
C_rss
t_d(on)
t_d(off)
−
40
50
pF
−
12
25
−
3.5
5.0
−
−
20
ns
−
−
20
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