BFL4007 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

BFL4007
Electrical Characteristics at Ta=25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
ID=10mA, VGS=0V
VDS=480V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=7A
ID=7A, VGS=10V
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=14A
IS=14A, VGS=0V
See Fig.3
IS=14A, VGS=0V, di/dt=100A/μs
Ratings
Unit
min
typ
max
600
V
100
μA
±100
nA
3
5
V
4.3
8.5
S
0.52
0.68
Ω
1200
pF
220
pF
43
pF
27
ns
72
ns
122
ns
48
ns
46
nC
8.6
nC
26.4
nC
1.1
1.5
V
95
ns
250
nC
Fig.1 Unclamped Inductive Switching Test Circuit
D
L
≥50Ω
RG _G
BFL4007
S
10V
0V
50Ω
VDD
Fig.2 Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.≤1%
VDD=200V
ID=7A
RL=28Ω
D
VOUT
G
BFL4007
S
P.G
50Ω
Fig.3 Reverse Recovery Time Test Circuit
D
BFL4007
G
S
500μH
VDD=50V
Driver MOSFET
No. A1689-2/6