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BD243B_14 Datasheet, PDF (2/6 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors
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BD243B, BD243C (NPN), BD244B, BD244C (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
BD243B, BD244B
BD243C, BD244C
VCEO(sus)
Vdc
80
−
100
−
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
BD243B, BD243C, BD244B, BD244C
ICEO
−
mAdc
0.7
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0)
BD243B, BD244B
(VCE = 100 Vdc, VEB = 0)
BD243C, BD244C
ICES
mAdc
−
400
−
400
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
−
mAdc
1.0
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.3 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 1.0 Adc)
Base−Emitter On Voltage
(IC = 6.0 Adc, VCE = 4.0 Vdc)
hFE
30
15
VCE(sat)
−
VBE(on)
−
−
−
−
Vdc
1.5
Vdc
2.0
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
MHz
3.0
−
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
−
20
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulsewidth ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. fT = hfe • ftest
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
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