BCP56T1 Datasheet, PDF (2/4 Pages) Motorola, Inc – MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

BCP56T1 Series
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(I_C = 100 mAdc, I_E = 0)
V_(BR)CBO
100
−
−
Vdc
Collector−Emitter Breakdown Voltage
(I_C = 1.0 mAdc, I_B = 0)
V_(BR)CEO
80
−
−
Vdc
Emitter−Base Breakdown Voltage
(I_E = 10 mAdc, I_C = 0)
V_(BR)EBO
5.0
−
−
Vdc
Collector−Base Cutoff Current
(V_CB = 30 Vdc, I_E = 0)
I_CBO
−
−
100
nAdc
Emitter-Base Cutoff Current
(V_EB = 5.0 Vdc, I_C = 0)
I_EBO
−
−
10
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I_C = 5.0 mA, V_CE = 2.0 V)
(I_C = 150 mA, V_CE = 2.0 V)
(I_C = 500 mA, V_CE = 2.0 V)
All Part Types
BCP56T1
BCP56-10T1
BCP56-16T1
All Types
h_FE
−
25
−
−
40
−
250
63
−
160
100
−
250
25
−
−
Collector−Emitter Saturation Voltage
(I_C = 500 mAdc, I_B = 50 mAdc)
V_CE(sat)
−
−
0.5
Vdc
Base-Emitter On Voltage
(I_C = 500 mAdc, V_CE = 2.0 Vdc)
V_BE(on)
−
−
1.0
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I_C = 10 mAdc, V_CE = 5.0 Vdc, f = 35 MHz)
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
f_T
−
130
−
MHz
ORDERING INFORMATION
Device
Marking
Package
Shipping^†
BCP56T1
BH
SOT−223
1000 / Tape & Reel
BCP56T3
BH
SOT−223
4000 / Tape & Reel
BCP56−10T1
BH−10
SOT−223
1000 / Tape & Reel
BCP56−16T1
SOT−223
1000 / Tape & Reel
BCP56−16T1G
BH−16
SOT−223
(Pb−Free)
1000 / Tape & Reel
BCP56−16T3
SOT−223
4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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