BCP53T1 Datasheet, PDF (2/4 Pages) Motorola, Inc – MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

BCP53T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = –100 µAdc, IE = 0)
V(BR)CBO
–100
—
—
Vdc
Collector-Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
V(BR)CEO
– 80
—
Collector-Emitter Breakdown Voltage (IC = –100 µAdc, RBE = 1.0 kohm) V(BR)CER
–100
—
Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0)
V(BR)EBO
– 5.0
—
—
Vdc
—
Vdc
—
Vdc
Collector-Base Cutoff Current (VCB = – 30 Vdc, IE = 0)
Emitter-Base Cutoff Current (VEB = – 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
ICBO
—
—
–100
nAdc
IEBO
—
—
–10
µAdc
DC Current Gain
(IC = – 5.0 mAdc, VCE = – 2.0 Vdc)
(IC = –150 mAdc, VCE = – 2.0 Vdc)
(IC = – 500 mAdc, VCE = – 2.0 Vdc)
hFE
—
25
—
—
40
—
250
25
—
—
Collector-Emitter Saturation Voltage (IC = – 500 mAdc, IB = – 50 mAdc)
VCE(sat)
—
Base-Emitter On Voltage (IC = – 500 mAdc, VCE = – 2.0 Vdc)
VBE(on)
—
DYNAMIC CHARACTERISTICS
—
– 0.5
Vdc
—
–1.0
Vdc
Current-Gain — Bandwidth Product
(IC = –10 mAdc, VCE = – 5.0 Vdc, f = 35 MHz)
fT
—
50
—
MHz
TYPICAL ELECTRICAL CHARACTERISTICS
500
VCE = 2 V
200
100
500
300
VCE = 2 V
100
50
50
20
1
3 5 10
30 50 100
300 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
20
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 2. Current Gain Bandwidth Product
1
0.8
V(BE)sat @ IC/IB = 10
0.6
V(BE)on @ VCE = 2 V
0.4
0.2
V(CE)sat @ IC/IB = 10
01
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 3. Saturation and “ON” Voltages
120
110
100
90
80
70
60
50
40
30
20
10
0
0
Cib
Cob
2 4 6 8 10 12 14 16 18 20
V, VOLTAGE (VOLTS)
Figure 4. Capacitances
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data