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BC818-40L Datasheet, PDF (2/4 Pages) ON Semiconductor – General Purpose Transistors
◁
BC818−40L, NSVBC818−40L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
V(BR)CEO
25
−
−
V
Collector −Emitter Breakdown Voltage
(VEB = 0, IC = −10 mA)
V(BR)CES
30
−
−
V
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
V(BR)EBO
5.0
−
−
V
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
ON CHARACTERISTICS
ICBO
−
−
100
nA
−
−
5.0
mA
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 1.0 V)
hFE
−
250
−
600
40
−
−
Collector −Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
VCE(sat)
−
−
0.7
V
Base −Emitter On Voltage
(IC = 500 mA, VCE = 1.0 V)
VBE(on)
−
−
1.2
V
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
−
−
MHz
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo
−
10
−
pF
1000
VCE = 1 V
TJ = 25°C
100
10
0.1
1.0
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
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