BC487 Datasheet, PDF(2/6 Page) ON Semiconductor – High Current Transistors NPN Silicon

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BC487 Datasheet, PDF (2/6 Pages) ON Semiconductor – High Current Transistors NPN Silicon

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BC487, BC487B

ELECTRICAL CHARACTERISTICS (TA = 25Â°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector âEmitter Breakdown Voltage (Note 1)

(IC = 10 mAdc, IB = 0)

Collector âBase Breakdown Voltage

(IC = 100 mAdc, IE = 0)

Emitter âBase Breakdown Voltage

(IE = 10 mAdc, IC = 0)

Collector Cutoff Current

(VCB = 40 Vdc, IE = 0)

ON CHARACTERISTICS*

DC Current Gain

(IC = 10 mAdc, VCE = 2.0 Vdc)

(IC = 100 mAdc, VCE = 2.0 Vdc)

(IC = 1.0 Adc, VCE = 5.0 Vdc)*

Collector âEmitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 1.0 Adc, IB = 100 mAdc)

Base âEmitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 1.0 Adc, IB = 100 mAdc)(1)

DYNAMIC CHARACTERISTICS

BC487

BC487B

CurrentâGain â Bandwidth Product

(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.

TURNâON TIME

5.0 ms

â1.0 V

+10 V

tr = 3.0 ns

Vin

5.0 mF

100

VCC

+40 V

OUTPUT

*CS < 6.0 pF

Symbol

Min

Typ

Max Unit

V(BR)CEO

Vdc

V(BR)CBO

Vdc

V(BR)EBO

5.0

Vdc

ICBO

100 nAdc

hFE

VCE(sat)

VBE(sat)

Cob

Cib

400

160

260

400

Vdc

0.2

0.5

0.3

Vdc

0.85

1.2

0.9

200

MHz

7.0

TURNâOFF TIME

+VBB

100

Vin

VCC

+40 V

OUTPUT

5.0 mF 100

*CS < 6.0 pF

5.0 ms

tr = 3.0 ns

*Total Shunt Capacitance of Test Jig and Connectors

For PNP Test Circuits, Reverse All Voltage Polarities

Figure 1. Switching Time Test Circuits

http://onsemi.com

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