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BC372_07 Datasheet, PDF (2/4 Pages) ON Semiconductor – High Voltage Darlington Transistors
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BC372, BC373
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage(1)
(IC = 100 mAdc, IB = 0)
V(BR)CES
BC372
100
−
BC373
80
−
Vdc
−
−
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
BC372
100
−
BC373
80
−
Vdc
−
−
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 V, IC = 0)
V(BR)EBO
12
ICBO
BC372
−
BC373
−
IEBO
−
−
−
Vdc
nAdc
−
100
−
100
−
100
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 250 mAdc, IB = 0.25 mAdc)
Base −Emitter Saturation Voltage
(IC = 250 mAdc, IB = 0.25 mAdc)
DYNAMIC CHARACTERISTICS
hFE
K
8.0
−
−
10
−
160
VCE(sat)
−
1.0
1.1
Vdc
VBE(sat)
−
1.4
2.0
Vdc
Current−Gain Bandwidth Product
(IC = 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Noise Figure
(IC = 1.0 mAdc, VCE = 5.0 Vdc, Rg = 100 kW, f = 1.0 kHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
fT
100
200
−
MHz
Cob
−
10
25
pF
NF
−
2.0
−
dB
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