BC337-040G Datasheet, PDF(2/5 Page) ON Semiconductor

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BC337-040G Datasheet, PDF (2/5 Pages) ON Semiconductor – Amplifier Transistors

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BC337, BC337â25, BC337â40

ELECTRICAL CHARACTERISTICS (TA = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector âEmitter Breakdown Voltage

(IC = 10 mA, IB = 0)

Collector âEmitter Breakdown Voltage

(IC = 100 mA, IE = 0)

EmitterâBase Breakdown Voltage

(IE = 10 mA, IC = 0)

Collector Cutoff Current

(VCB = 30 V, IE = 0)

Collector Cutoff Current

(VCE = 45 V, VBE = 0)

Emitter Cutoff Current

(VEB = 4.0 V, IC = 0)

ON CHARACTERISTICS

V(BR)CEO

Vdc

V(BR)CES

Vdc

V(BR)EBO

5.0

Vdc

ICBO

100

nAdc

ICES

100

nAdc

IEBO

100

nAdc

DC Current Gain

(IC = 100 mA, VCE = 1.0 V)

(IC = 300 mA, VCE = 1.0 V)

hFE

BC337

BC337â25

BC337â40

100

630

160

400

250

630

BaseâEmitter On Voltage

(IC = 300 mA, VCE = 1.0 V)

Collector âEmitter Saturation Voltage

(IC = 500 mA, IB = 50 mA)

VBE(on)

VCE(sat)

1.2

Vdc

0.7

Vdc

SMALLâSIGNAL CHARACTERISTICS

Output Capacitance

(VCB = 10 V, IE = 0, f = 1.0 MHz)

Cob

Current âGain â Bandwidth Product

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)

210

MHz

1.0

0.7

D = 0.5

0.5

0.3

0.2

0.1

0.1 0.05

0.07 0.02

0.05

0.03

0.01

0.02

SINGLE PULSE

0.01

0.001 0.002

0.005 0.01 0.02

P(pk)

DUTY CYCLE, D = t1/t2

0.05 0.1 0.2

0.5 1.0 2.0

t, TIME (SECONDS)

Figure 1. Thermal Response

qJC(t) = (t) qJC

qJC = 100Â°C/W MAX

qJA(t) = r(t) qJA

qJA = 375Â°C/W MAX

D CURVES APPLY FOR

POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) â TC = P(pk) qJC(t)

5.0 10 20

50 100

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