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BC237_06 Datasheet, PDF (2/4 Pages) ON Semiconductor – Amplifier Transistors NPN Silicon
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BC237, BC237B, BC237C, BC239C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
BC237 V(BR)CEO
45
−
−
BC239
25
−
−
Emitter −Base Breakdown Voltage
(IE = 100 mA, IC = 0)
Collector Cutoff Current
(VCE = 30 V, VBE = 0)
(VCE = 50 V, VBE = 0)
(VCE = 30 V, VBE = 0) TA = 125°C
(VCE = 50 V, VBE = 0) TA = 125°C
ON CHARACTERISTICS
BC237 V(BR)EBO
6.0
−
−
BC239
5.0
−
−
BC239
BC237
BC239
BC237
ICES
−
0.2
15
−
0.2
15
−
0.2
4.0
−
0.2
4.0
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
hFE
BC237B
BC237C/239C
BC237
BC237B
BC237C/239C
BC237B
BC237C/239C
−
150
−
−
270
−
120
−
800
200
290
460
380
500
800
−
180
−
−
300
−
Collector −Emitter On Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
BC237/BC239
BC237/BC239
VCE(sat)
VBE(sat)
−
0.07
0.2
−
0.2
0.6
−
0.6
0.83
−
−
1.05
Base−Emitter On Voltage
(IC = 100 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
DYNAMIC CHARACTERISTICS
VBE(on)
−
0.5
−
0.55 0.62
0.7
−
0.83
−
Current −Gain — Bandwidth Product
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz)
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT
BC237
BC239
BC237
BC239
−
100
−
−
140
−
150
200
−
150
280
−
Collector−Base Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Cobo
−
−
4.5
Emitter−Base Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Cibo
−
8.0
−
Noise Figure
NF
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kW, f = 1.0 kHz)
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz)
BC239
BC237
BC239
−
2.0
4.0
−
2.0
10
−
2.0
4.0
Figure 1.
Unit
V
V
nA
mA
−
V
V
V
MHz
pF
pF
dB
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