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BC237B_07 Datasheet, PDF (2/4 Pages) ON Semiconductor – Amplifier Transistors
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BC237B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
Emitter −Base Breakdown Voltage
(IE = 100 mA, IC = 0)
Collector Cutoff Current
(VCE = 50 V, VBE = 0)
(VCE = 50 V, VBE = 0) TA = 125°C
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
Collector −Emitter On Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base−Emitter On Voltage
(IC = 100 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
DYNAMIC CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz)
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
Collector−Base Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Emitter−Base Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz)
Symbol
Min
Typ
Max
V(BR)CEO
45
−
−
V(BR)EBO
6.0
−
−
ICES
−
0.2
15
−
0.2
4.0
hFE
VCE(sat)
VBE(sat)
VBE(on)
−
150
−
200
290
460
−
180
−
−
0.07
0.2
−
0.2
0.6
−
0.6
0.83
−
−
1.05
−
0.5
−
0.55 0.62
0.7
−
0.83
−
fT
Cobo
Cibo
NF
−
100
−
150
200
−
−
−
4.5
−
8.0
−
−
2.0
10
Unit
V
V
nA
mA
−
V
V
V
MHz
pF
pF
dB
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