BC212B Datasheet, PDF (2/4 Pages) ON Semiconductor – Amplifier Transistors PNP Silicon

BC212B
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector−Emitter Leakage Current
Emitter−Base Leakage Current
ON CHARACTERISTICS
DC Current Gain
(I_C = −10 mAdc, V_CE = −5.0 Vdc)
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
I_EBO
h_FE
(I_C = −2.0 mAdc, V_CE = −5.0 Vdc)
(I_C = −100 mAdc, V_CE = −5.0 Vdc) (Note 1)
Collector −Emitter Saturation Voltage
(I_C = −10 mAdc, I_B = −0.5 mAdc)
(I_C = −100 mAdc, I_B = −5.0 mAdc) (Note 1)
Base −Emitter Saturation Voltage
(I_C = −100 mAdc, I_B = −5.0 mAdc)
Base−Emitter On Voltage
(I_C = −2.0 mAdc, V_CE = −5.0 Vdc)
DYNAMIC CHARACTERISTICS
V_CE(sat)
V_BE(sat)
V_BE(on)
Current −Gain − Bandwidth Product
f_T
(I_C = −10 mAdc, V_CE = −5.0 Vdc, f = 100 mHz)
Common−Base Output Capacitance
C_ob
(V_CB = −10 Vdc, I_C = 0, f = 1.0 mHz)
Noise Figure
NF
(I_C = −0.2 mAdc, V_CE = −5.0 Vdc, R_S = 2.0 kW, f = 1.0 kHz, f = 200 Hz)
Small−Signal Current Gain
h_fe
(I_C = −2.0 mAdc, V_CE = −5.0 Vdc, f = 1.0 kHz)
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
Min
−50
−60
−5
−
−
40
60
−
−
−
−
−0.6
−
−
−
200
Typ
Max
Unit
−
−
Vdc
−
−
Vdc
−
−
Vdc
−
−15
nAdc
−
−15
nAdc
−
−
−
−
−
120
−
Vdc
−0.10
−
−0.25
−0.6
−1.0
−1.4
Vdc
−0.62
−0.72
Vdc
280
−
MHz
−
6.0
pF
−
10
dB
−
400
−
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