BAV199L Datasheet, PDF(2/4 Page) ON Semiconductor

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

BAV199L Datasheet, PDF (2/4 Pages) ON Semiconductor – Dual Series Switching Diode

◁

BAV199L, SBAV199L

ELECTRICAL CHARACTERISTICS (TA = 25Â°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(I(BR) = 100 mAdc)

V(BR)

Vdc

Reverse Voltage Leakage Current

(VR = 70 Vdc)

(VR = 70 Vdc, TJ = 150Â°C)

nAdc

5.0

Diode Capacitance

(VR = 0 V, f = 1.0 MHz)

2.0

Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

mVdc

900

1000

1100

1250

Reverse Recovery Time

(IF = IR = 10 mAdc) (Figure 1)

trr

3.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

820 W

+10 V

2.0 k

100 mH IF

0.1 mF

10%

trr

50 W OUTPUT

PULSE

GENERATOR

DUT

90%

50 W INPUT

SAMPLING

OSCILLOSCOPE

INPUT SIGNAL

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp Â» trr

Figure 1. Recovery Time Equivalent Test Circuit

www.onsemi.com

▷