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BAT54CTT1 Datasheet, PDF (2/4 Pages) ON Semiconductor – Dual Series Schottky Barrier Diodes
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BAT54CTT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
30
−
−
V
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
−
7.6
10
pF
Reverse Leakage
(VR = 25 V)
IR
−
0.5
2.0
mAdc
Forward Voltage
(IF = 0.1 mAdc)
VF
−
0.22
0.24
Vdc
Forward Voltage
(IF = 30 mAdc)
VF
−
0.41
0.5
Vdc
Forward Voltage
(IF = 100 mAdc)
VF
−
0.52
0.8
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
−
−
5.0
ns
Forward Voltage
(IF = 1.0 mAdc)
VF
−
0.29
0.32
Vdc
Forward Voltage
(IF = 10 mAdc)
VF
−
0.35
0.40
Vdc
Forward Current (DC)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current
(t < 1.0 s)
IF
IFRM
IFSM
−
−
200
mAdc
−
−
300
mAdc
−
−
600
mAdc
820 W
+10 V
2k
100 mH IF
0.1 mF
0.1 mF
tr
tp
T
IF
10%
trr
T
50 W OUTPUT
PULSE
GENERATOR
DUT
50 W INPUT
SAMPLING
OSCILLOSCOPE VR
90%
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
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